IPB051NE8NGATMA1
Infineon Technologies
English
Part Number: | IPB051NE8NGATMA1 |
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Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
Part of Description: | N-CHANNEL POWER MOSFET |
Datasheets: | None |
RoHs Status: | Lead free / RoHs compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
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Product Attribute | Attribute Value |
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Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3-2 |
Series | OptiMOS™2 |
Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
Power Dissipation (Max) | 300W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Bulk |
Product Attribute | Attribute Value |
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Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 12100 pF @ 40 V |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 85 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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